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revisions ltr description date (yr - mo - da) approved a change drawing cage code to 67268. add case outline. device type 02jx no longer available from an approved source. technical and editorial changes throughout. 91- 11- 01 m. a. frye b changes in accordance with nor 5962 - r101 - 93. 93 - 03 - 23 monica l. poelking c changes in accordance with nor 5962 - r148 - 93. 93 - 09 - 16 monica l. poelking d add vendor cage f8859. add device class v criteria. editorial changes throughout - gap. 99- 11- 23 raymond monnin e add case outline x. add delta limits for class v devices. editorial changes throughout - gap. 00- 07- 27 raymond monnin f change the delta limit for the v oh parameter in table iii. update boilerplate to latest mil - prf - 38535 requirements. - cfs 01- 01- 17 thomas m. hess g add case outline z. - jak 01- 07- 23 thomas m. hess h add section 1.5, radiation features. update boilerplate to mil - prf - 38535 requirements and to include radiation hardness assured requirements. editorial changes throughout. ? ltg 05- 03- 14 thomas m. hess j add appendix a to document. update radiation hardness assurance requirements. - ltg 07- 06- 21 thomas m. hess k update dimensions of case outline x to figure 1. - ltg 12- 07- 25 thomas m. hess currrent cage code 67268 rev sheet rev k k k k k k k k k k k sheet 15 16 17 18 19 20 21 22 23 24 25 rev status rev k k k k k k k k k k k k k k of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by marcia b. kelleher dla land and maritime columbus, ohio 43218 - 3990 http://www.landandmaritime.dla.mil standard microcircuit drawing this drawing is available for use by all departments and agencies of the department of defense amsc n/a checked by thomas j. riccuiti approved by michael a. frye microcircuit, digital, advanced cmos, octal buffer/line driver with three - state outputs, monolithic silicon drawing approval date 87- 06- 23 revision level k size a cage code 14933 5962- 87552 sheet 1 of 2 5 dscc form 2233 apr 97 5962- e 421- 12
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class levels consisting of high reliability (device classes q and m) and space application (device class v ). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha) levels is reflected in the pin. 1.2 pin . the pin is as shown in the following examples. for device classes m and q: 5962 - 87552 01 x a federal stock class designator rha designator (see 1.2.1) device type (see 1.2.2) case outline (see 1.2.4) lead finish (see 1.2.5) \ / \ / drawing number for device class v: 5962 f - 87552 01 v x a federal stock class designator rha designator (see 1.2.1) device type (see 1.2.2) device class designator case outline (see 1.2.4) lead finish (see 1.2.5) \ / (see 1.2.3) \ / drawing number 1.2.1 rha designator . device classes q and v rha marked devices meet the mil - prf - 38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil - prf - 38535, appendix a specified rha levels and are marked with the app ropriate rha designator. a dash ( - ) indicates a non- rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 54ac244 octal buffer/line driver with three - state outputs 02 54ac11244 octal buffer/line driver with three - state outputs 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as listed below. since the device class designator has been added after the original issuance of this drawing, device classes m and q designators will not be included in the pin and will not be marked on the device. device class device requirements documentation m vendor self -c ertification to the requirements for mil - std - 883 compliant, non- jan class level b microcircuits in accordance with mil - prf - 38535, appendix a q or v certification and qualification to mil - prf -38535
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 3 dscc form 2234 apr 97 1.2.4 case outline(s) . the case outline(s) are as designated in mil - std - 1835 and as follows: outline letter descriptive designator terminals package style j gdip1 - t24 or cdip2- t24 24 dual -in - line k gdfp2 - f24 or cdfp3- f24 24 flat pack l gdip3 - t24 or cdip4- t24 24 dual -in - line r gdip1 - t20 or cdip2- t20 20 dual -in - line s gdfp2 - f20 or cdfp3- f20 20 flat pack x see figure 1 20 flat pack z gdfp1 - g20 20 flat pack 2 cqcc1 - n20 20 square leadless chip carrier 3 cqcc1 - n28 28 square leadless chip carrier 1.2.5 lead finish . the lead finish is as specified i n mil - prf - 38535 for device classes q and v or mil- prf -38535, appendix a for device class m. 1.3 absolute maximum ratings . 1 / 2 / 3 / supply voltage range (v cc ) .................................................................................. - 0.5 v dc to +7.0 v dc dc input voltage range (v in ) ................................................................................ - 0.5 v dc to v cc + 0.5 v dc dc output voltage range (v out ) ........................................................................... - 0.5 v dc to v cc + 0.5 v dc clamp diode current (i ik , i ok ) ............................................................................... 20 ma dc output current (per output pin) ....................................................................... 50 ma dc v cc or gnd current (per output pin) .............................................................. 25 ma 4 / maximum power dissipation (p d ) ......................................................................... 500 mw storage temperature range (t stg ) ....................................................................... -65 c to +150c lead temperature (soldering, 10 seconds): case outline x ................................................................................................... +260 c all other case outlines except case x ................................................................ +245 c thermal resistance, junction -to - case ( jc ) ........................................................... see mil - std -1835 junction temperature (t j ) .................................................................................... +175 c 5 / 1.4 recommended operat ing conditions . 2 / 3 / 6 / supply voltage range (v cc ) .................................................................................. +2.0 v dc to +6.0 v dc input voltage range (v in ) ...................................................................................... +0.0 v dc to v cc output voltage range (v out ) ................................................................................. +0.0 v dc to v cc case operating temperature range (t c ) ............................................................... -55 c to +125c input rise or fall times (t r , t f ): device type 01: v cc = 3.6 v and 5.5 v .................................................................................... 0 to 8 ns/v device type 02: data (v cc = 3.6 v and 5.5 v) ......................................................................... 0 to 10 ns/v oe m (v cc = 3.6 v and 5.5 v) ....................................................................... 0 to 5 ns/v 1 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2 / unless otherwise noted, all voltages are referenced to gnd. 3 / the limits for the parameters specified herein shall apply over the full spe cified v cc range and case temperature range of -55 c to +125 c. 4 / for devices with multiple v cc or gnd pins, this value represents the total v cc or gnd current. 5 / maximum junction temperature shall not be exceeded except for allowable short duration burn - in screening conditions in accordance with method 5004 of mil - std -883. 6 / operation from 2.0 v dc to 3.0 v dc is provided for compatibility with data retention and battery back - up systems. data retention implies no input transition and no s tored data loss with the following conditions: v ih 70% v cc , v il 30% v cc , v oh 70% v cc @ - 20 a, v ol 30% v cc @ 20 a.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 4 dscc form 2234 apr 97 1.5 radiation features . device type 01: maximum t otal dose available (dose rate = 50 ? 300 rads (si)/s) .................... 300 krads (si) 7 / no sel occurs at effective let ( see 4.4.4. 2) .................................................. 93 mev -cm 2 /mg 7 / 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. department of defense specification mil - prf -38535 - integrated circuits, manufacturing, general specification for. department o f defense standards mil - std -883 - test method standard microcircuits. mil - std -1835 - interface standard electronic component case outlines. department of defense handbooks mil - hdbk -103 - list of standard microcircuit drawings. mil - hdbk -780 - standard microcircuit drawings. (copies of these documents are available online at https://assist.dla.mil/quicksearch/ or from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111 - 5094.) 2.2 non - government publications . the following document(s) form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents cited in the solicitation or contract. jedec ? solid state technology association (jedec) jedec standard no. 20 - standard for description of 54/74acxxxxx and 54/74actxxxxx advanced high- speed cmos devices. (copies of these documents are available online at http://www.jedec.org or from jedec ? solid state technology association, 3103 north 10 th street, suite 240 -s arlington, va 22201). astm international (astm) astm f1192 - standard guide for the measurement of single event phenomena (sep) induced by heavy ion irradiation of semiconductor devices. (copies of this document is available online at http://www.astm.org/ or from astm international, p. o. box c700, 100 barr harbor drive, west conshohocken, pa 19428 - 2959). (non - government standards and other publications are normally available from the organizations that prepare or distribute the documents. these documents may also be available in or through libraries or other informatio nal services.) 2.3 order of precedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulation s unless a specific exemption has been obtained. 7 / these limits were obtained during technology characterization and qualification, and are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 5 dscc form 2234 apr 97 3. requirements 3.1 item requiremen ts . the individual item requirements for device classes q and v shall be in accordance with mil - prf - 38535 and as specified herein or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil - prf - 38535, appendix a for non- jan class level b devices and as specified herein. 3.1.1 microcircuit die . for the require ments of microcircuit die, see appendix a to this document. 3.2 design, construction, and physical dimensions . the design, construction, and physical dimensions shall be as specified in mil - prf - 38535 and herein for device classes q and v or mil- prf -3853 5, appendix a and herein for device class m. 3.2.1 case outlines . the case outlines shall be in accordance with figure 1 and 1.2.4 herein. 3.2.2 terminal connections . the terminal connections shall be as specified on figure 2. 3.2.3 truth table . t he truth table shall be as specified on figure 3. 3.2.4 logic diagram . the logic diagram shall be as specified on figure 4. 3.2.5 switching waveforms and test circuit . the switching waveforms and test circuit shall be as specified on figure 5. 3.2.6 radiation exposure circuit . the radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 electrical performance characte ristics and postirradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table i a and shall apply over the full case operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in table iia. the electrical tests for each subgroup are defined in table ia. 3.5 marking . the part shall be marked with the pin listed in 1.2 herein . in addition, the manufacturer's pin may also be marked. for packages where marking of the entire smd pin number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962 - " on the device. for rha product using t his option, the rha designator shall still be marked. marking for device classes q and v shall be in accordance with mil - prf - 38535. marking for device class m shall be in accordance with mil - prf - 38535, appendix a. 3.5.1 certification/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil - prf - 38535. the compliance mark for device class m shall be a "c" as required in mil- prf - 38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml - 38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). for device class m, a certifi cate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil - hdbk -103 (see 6.6.2 herein). the certificate of compliance submitted to dla land and maritime - va prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes q and v, the requirements of mil - prf - 38535 and herein or for device class m, the requirements of mil- prf - 38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conf ormance as required for device classes q and v in mil - prf - 38535 or for device class m in mil - prf - 38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device cla ss m, notification to dla land and maritime - va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 verification and review for device class m . for device class m, dla land and maritime, dla land and maritime's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. of fshore documentation shall be made available onshore at the option of the review er . 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 37 (see mil - prf - 38535, appendix a).
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 6 dscc form 2234 apr 97 table i a. electrical performance characteristics . test and mil - std -883 test method 1 / symbol test conditions 2 / 3 / -55c t c +125 c +3.0 v v cc +5.5 v unless otherwise specified device type and device class v cc group a subgroups limits 4 / unit min max positive input clamp voltage 3022 v ic+ for input under test, i in = 1.0 ma all v 0.0 v 1 0.4 1.5 v negative input clamp voltage 3022 v ic - for input under test, i in = - 1.0 ma all v open 1 - 0.4 - 1.5 v high level output voltage 3006 v oh 5 / v in = v ih minimum or v il maximum i oh = -50 a all all 3.0 v 1, 2, 3 2.9 v all all 4.5 v 1, 2, 3 4.4 all all 5.5 v 1, 2, 3 5.4 v in = v ih minimum or v il maximum i oh = - 12 ma all all 3.0 v 1 2.56 2, 3 2.40 v in = v ih minimum or v il maximum i oh = - 24 ma all all 4.5 v 1 3.86 2, 3 3.70 all all 5.5 v 1 4.86 2, 3 4.70 v in = v ih minimum or v il maximum i oh = - 50 ma all all 5.5 v 1, 2, 3 3.85 low level output voltage 3007 v ol 5 / v in = v ih minimum or v il maximum i ol = 50 a all all 3.0 v 1, 2, 3 0.1 v all all 4.5 v 1, 2, 3 0.1 all all 5.5 v 1, 2, 3 0.1 v in = v ih minimum or v il maximum i ol = 12 ma all all 3.0 v 1 0.36 2, 3 0.50 v in = v ih minimum or v il maximum i ol = 24 ma all all 4.5 v 1 0.36 2, 3 0.50 all all 5.5 v 1 0.36 2, 3 0.50 v in = v ih minimum or v il maximum i ol = 50 ma all all 5.5 v 1, 2, 3 1.65 high level input voltage v ih 6 / all all 3.0 v 1, 2, 3 2.1 v all all 4.5 v 1, 2, 3 3.15 all all 5.5 v 1, 2, 3 3.85 see footnotes at end of table.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 7 dscc form 2234 apr 97 table i a. electrical performance characteristics - continued. test and mil - std -883 test method 1 / symbol test conditions 2 / 3 / -55c t c +125 c +3.0 v v cc +5.5 v unless otherwise specified device type and device class v cc group a subgroups limits 4 / unit min max low level input voltage v il 6 / all all 3.0 v 1, 2, 3 0.9 v all all 4.5 v 1, 2, 3 1.35 all all 5.5 v 1, 2, 3 1.65 input leakage current low 3009 i il v in = 0.0 v all all 5.5 v 1 - 0.1 a 2, 3 - 1.0 input leakage current high 3010 i ih v in = 5.5 v all all 5.5 v 1 0.1 a 2, 3 1.0 quiescent supply current, output high 3005 i cch v in = v cc or gnd all all 5.5 v 1 4 a 2, 3 80 m, d, p, l, r, f 7 / 01 q, v 1 50 quiescent supply current, output low 3005 i ccl v in = v cc or gnd all all 5.5 v 1 4 a 2, 3 80 m, d, p, l, r, f 7 / 01 q, v 1 50 quiescent supply current, output three- state 3005 i ccz v in = v cc or gnd all all 5.5 v 1 4 a 2, 3 80 m, d, p, l, r, f 7 / 01 q, v 1 50 three - state output leakage current high 3021 i ozh oe m = v ih min or v il max all other inputs = v cc or gnd v out = 5.5 v, test with each oe m = v ih min all all 5.5 v 1, 2, 3 +5.0 a three - state output leakage current low 3020 i ozl oe m = v ih min or v il max all other inputs = v cc or gnd v out = gnd, test with each oe m = v ih min all all 5.5 v 1, 2, 3 - 5.0 a input capacitance 3012 c in see 4.4.1c t c = +25 c all all gnd 4 8.0 pf power dissipation capacitance c pd 8 / see 4.4.1c t c = +25 c, f = 1 mhz all all 5.0 v 4 60.0 pf functional tests 3014 9 / see 4.4.1b v in = v ih min or v il max verify output v out all all 3.0 v 7, 8 l h 5.5 v 7, 8 l h see footnotes at end of table .
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 8 dscc form 2234 apr 97 table i a. electrical performance characteristics - continued. test and mil - std -883 test method 1 / symbol test conditions 2 / 3 / -55c t c +125 c +3.0 v v cc +5.5 v unless otherwise specified device type and device class v cc group a subgroups limits 4 / unit min max propagation delay time, man to myn 3003 t phl 10/ c l = 50 pf minimum r l = 500 ? see figure 5 01 all 3.0 v 9 1.0 10.5 ns 02 all 1.0 8.6 01 all 10, 11 1.0 12.0 02 all 1.0 10.5 01 all 4.5 v 9 1.0 8.0 02 all 1.0 6.4 01 all 10, 11 1.0 9.0 02 all 1.0 7.4 t plh 10/ 01 all 3.0 v 9 1.0 11.0 02 all 1.0 9.3 01 all 10, 11 1.0 12.5 02 all 1.0 10.8 01 all 4.5 v 9 1.0 8.5 02 all 1.0 6.7 01 all 10, 11 1.0 9.5 02 all 1.0 7.7 see footnotes at end of table.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 9 dscc form 2234 apr 97 table i a. electrical performance characteristics - continued. test and mil - std -883 test method 1 / symbol test conditions 2 / 3 / -55c t c +125 c +3.0 v v cc +5.5 v unless otherwise specified device type and device class v cc group a subgroups limits 4 / unit min max propagation delay time, output disable, moe to myn 3003 t phz 10/ c l = 50 pf minimum r l = 500 ? see figure 5 01 all 3.0 v 9 1.0 10.0 ns 02 all 1.0 7.9 01 all 10, 11 1.0 12.5 02 all 1.0 8.7 01 all 4.5 v 9 1.0 9.0 02 all 1.0 7.0 01 all 10, 11 1.0 10.5 02 all 1.0 7.6 t plz 10/ 01 all 3.0 v 9 1.0 11.0 02 all 1.0 9.4 01 all 10, 11 1.0 13.0 02 all 1.0 10.4 01 all 4.5 v 9 1.0 9.0 02 all 1.0 7.8 01 all 10, 11 1.0 11.0 02 all 1.0 8.6 see footnotes at end of table.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 10 dscc form 2234 apr 97 table i a. electrical performance characteristics - continued. test and mil - std -883 test method 1 / symbol test conditions 2 / 3 / -55c t c +125 c +3.0 v v cc +5.5 v unless otherwise specified device type and device class v cc group a subgroups limits 4 / unit min max propagation delay time, output enable, moe to myn 3003 t pzh 10/ c l = 50 pf r l = 500 ? see figure 5 01 all 3.0 v 9 1.0 10.5 ns 02 all 1.0 10.7 01 all 10, 11 1.0 11.5 02 all 1.0 12.9 01 all 4.5 v 9 1.0 7.5 02 all 1.0 7.7 01 all 10, 11 1.0 9.0 02 all 1.0 9.3 t pzl 10/ 01 all 3.0 v 9 1.0 11.0 02 all 1.0 10.6 01 all 10, 11 1.0 13.0 02 all 1.0 12.9 01 all 4.5 v 9 1.0 8.5 02 all 1.0 7.6 01 all 10, 11 1.0 10.5 02 all 1.0 9.1 1 / for tests not listed in the referenced mil - std - 883, [e.g. v ih , v il ], utilize the general test procedure under the conditions listed herein. 2 / each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests in table i a herein. output terminals not designated shall be high level logic, low level logic, or open, except as follows: a. v ic (pos) tests, the gnd terminal can be open. t c = +25 c. b. v ic (neg) tests, the v cc terminal shall be open. t c = +25 c. c. all i cc tests, the output terminal shall be open. when performing these tests, the current meter shall be placed in the circuit such that all current flows through the meter. 3 / rha parts for device type 01 of this drawing have been characterized through all levels m, d, p, l, r, and f of irradiation. however, these devices are only tested at the 'f' level. pre and post irradiation values are identical unless otherwise specified in table ia. when performing post irradiation electrical measurements for any rha level, t a = +25 c.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 11 dscc form 2234 apr 97 table i a. electrical performance characteristics - continued. 4 / for negative and positive voltage and current values, the sign designates the potential difference in reference to gnd and the direction of current flow, respectively; and the absolute value of the magnitude, not the sign, is relative to the minimum and maximu m limits, as applicable, listed herein. all devices shall meet or exceed the limits specified in table i a , as applicable, at 3.0 v v cc 3.6 v and 4.5 v v cc 5.5 v. 5 / the v oh and v ol tests shall be tested at v cc = 3.0 v and 4.5 v. the v oh and v ol tests are guaranteed, if not tested, for other values of v cc . limits shown apply to operation at v cc = 3.3 v 0.3 v and v cc = 5.0 v 0.5 v. tests with input current at +50 ma or - 50 ma are performed on only one input at a time with duration not to e xceed 10 ms. transmission driving tests may be performed using v in = v cc or gnd. when v in = v cc or gnd is used, the test is guaranteed for v in = v ih minimum and v il maximum. 6 / the v ih and v il tests are not required if applied as forcing functions for v oh and v ol tests. 7 / the maximum limit for this parameter at 100 krads (si) is 4 a. 8 / power dissipation capacitance (c pd ) determines both the dynamic power consumption (p d ) and dynamic c urrent consumption (i s ). where: p d = (c pd + c l ) (v cc x v cc )f + (i cc x v cc ) i s = (c pd + c l ) v cc f + i cc f is the frequency of the input signal and c l is the external output load capacitance. 9 / tests shall be performed in sequence, attributes data only. functional tests shall include the truth table and other logic patterns used for fault detection. the test vectors used to verify the truth table shall, at a minimum, test all functions o f eac h input and output. all possible input to output logic patterns per function shall be guaranteed, if not tested, to the truth table in figure 3 herein. functional tests shall be performed in sequence as approved by the qualifying activity on qualified devices. allowable tolerances in accordance with mil - std - 883 for the input voltage levels may be incorporated. for v out measurements, l 0.3v cc and h 0.7v cc . 10/ ac limits at v cc = 5.5 v are equal to the limits at v cc = 4.5 v and guaranteed by testing at v cc = 4.5 v. ac limits at v cc = 3.6 v are equal to the limits at v cc = 3.0 v and guaranteed by testing at v cc = 3.0 v. minimum ac limits for v cc = 5.5 v are 1.0 ns and guaranteed by guardbanding the v cc = 4 .5 v minimum limits to 1.5 ns. for propagation delay tests, all paths must be tested. table ib. sep test limits . 1 / 2 / device type sep t c = temperature 10c v cc effective let 01 no sel + 1 25c bias v cc = 5.5 v 93 mev -cm 2 /mg 1 / for s e p test conditions, see 4.4.4.2 herein. 2 / technology characterization and model verification supplemented by in - line data may be used in lieu of end-of - line testing. test plan must be approved by trb and qualifying activity.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 12 dscc form 2234 apr 97 case outline x symbol dimensions inches millimeters typical min max typical min max a 0.075 0.087 1.91 2.21 b 0.015 0.019 0.38 0.48 c 0.003 0.006 0.076 0.152 d 0.505 0.515 12.83 13.08 e 0.275 0.285 6.99 7.24 e2 0.199 0.211 5.05 5.36 e3 0.037 0.95 e 0.045 0.055 1.14 1.40 l 0.250 0.370 6.35 9.39 q 0.010 --- 0.25 --- s1 0.021 0.55 note: deviation from mil - std - 1835 ref. f - 9, config. b the dimension c is 0.003 inches minimum instead of 0.004 inches minimum and dimension q is 0.010 inches minimum instead of 0.026 inches minimum. figure 1. case outline x .
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 13 dscc form 2234 apr 97 device types 01 02 case outlines r, s, x, z 2 j, k, l 3 terminal number terminal symbol terminal symbol 1 oe 1 oe 1 1y1 nc 2 1a1 1a1 1y2 v cc 3 2y4 2y4 1y3 1a4 4 1a2 1a2 1y4 1a3 5 2y3 2y3 gnd 1a2 6 1a3 1a3 gnd 1a1 7 2y2 2y2 gnd oe 1 8 1a4 1a4 gnd nc 9 2y1 2y1 2y1 1y1 10 gnd gnd 2y2 1y2 11 2a1 2a1 2y3 1y3 12 1y4 1y4 2y4 1y4 13 2a2 2a2 oe 2 gnd 14 1y3 1y3 2a4 gnd 15 2a3 2a3 2a3 nc 16 1y2 1y2 2a2 gnd 17 2a4 2a4 2a1 gnd 18 1y1 1y1 v cc 2y1 19 oe 2 oe 2 v cc 2y2 20 v cc v cc 1a4 2y3 21 --- --- 1a3 2y4 22 --- --- 1a2 nc 23 --- --- 1a1 oe 2 24 --- --- oe 1 2a4 25 --- --- --- 2a3 26 --- --- --- 2a2 27 --- --- --- 2a1 28 --- --- --- v cc nc = no internal connection figure 2. terminal connections .
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 14 dscc form 2234 apr 97 (each buffer) inputs outputs oe m man myn l l l l h h h x z h = high voltage level l = low voltage level x = immaterial z = high impedance figure 3. truth table . figure 4. logic diagram .
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 15 dscc form 2234 apr 97 n otes: 1. v test = open for t plh , t phl , t phz , and t pzh . v test = 2 x v cc for t plz and t pzl . 2. c l = 50 pf or equivalent (includes test jig and probe capacitance). 3. r l = 500 ? or equivalent. 4. waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control. waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control. 5. input signal fr om pulse generator: v in = 0.0 v to v cc ; prr 1 mhz; z o = 50 ?; t r 3.0 ns; t f 3.0 ns; t r and t f shall be measured from 10% of v cc to 90% of v cc and from 90% of v cc to 10% of v cc , respectively; duty cycle = 50 percent. 6. timing parameters shall be teste d at a minimum input frequency of 1mhz. 7. the outputs are measured one at a time with one transition per measurement. figure 5. switching waveforms and test circuit .
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 16 dscc form 2234 apr 97 4. verification 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil - prf - 38535 or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for de vice class m, sampling and inspection procedures shall be in accordance with mil - prf - 38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil - prf - 38535, and shall be conducted on all devices prior to qualif ication and technology conformance inspection. for device class m, screening shall be in accordance with method 5004 of mil - std - 883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 additional criteria for device class m . a. burn - in test, method 1015 of mil- std -883. (1) test condition a, b, c, or d . the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upo n request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) t a = +125 c, minimum. b. interim and final electrical test parameters shall be as specified in table ii a herein. 4.2.2 additional criteria for device classes q and v . a. the burn - in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance wit h mil - prf - 38535. the burn- in test circuit shall be maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil - prf - 38535 and shall be made available to the acquiring or preparing act ivity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of mil - std -883. b. interim and final electrical test parameters shall be as speci fied in table ii a herein. c. additional screening for device class v beyond the requirements of device class q shall be as specified in mil - prf - 38535, appendix b. 4.3 qualification inspection for device classes q and v . qualification inspection for d evice classes q and v shall be in accordance with mil - prf - 38535. inspections to be performed shall be those specified in mil- prf - 38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for classes q and v shall be in accordance with mil - prf - 38535 including groups a, b, c, d, and e inspections and as specified. quality conformance inspection for device class m shall be in accordance with mil - prf - 38535, appendix a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mil - std - 883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4.1 group a inspection a. tests shall be as specified in table ii a herein. b. for device class m, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 3 herein. the test vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. all possible input to output logic patterns per function shall be guaranteed, if not tested, to the truth table in figure 3, herein. for device classes q and v, subgroups 7 and 8 shall include verifying the functionality of the device. c. c in and c pd shall be measured only for initial qualification and after process or design changes which may affect capacitance. c in shall be measured between the designated terminal and gnd at a frequency of 1 mhz. c pd shall be tested in acco rdance with the latest revision of jedec standard no. 20 and table i a herein. for c in and c pd , test all applicable pins on five devices with zero failures.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 17 dscc form 2234 apr 97 table ii a. electrical test requirements . test requirements subgroups (in accordance with mil - std - 883, method 5005, table i) subgroups (in accordance with mil - prf - 38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) - - - - - - 1 final electrical parameters (see 4.2) 1 / 1, 2, 3, 7, 8, 9 1 / 1, 2, 3, 7, 8, 9 2 /, 3 / 1, 2, 3, 7, 8, 9, 10, 11 group a test requirements (see 4.4) 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 group c end - point electrical parameters (see 4.4) 1, 2, 3 1, 2, 3 3 / 1, 2, 3, 7,8, 9, 10, 11 group d end - point electrical parameters (see 4.4) 1, 2, 3 1, 2, 3 1, 2, 3 group e end - point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 1 / pda applies to subgroup 1. 2 / pda applies to subgroups 1, 7, and deltas. 3 / delta limits, as specified in table ii b , shall be required where specified, and the delta limits shall be completed with reference to the zero hour electrical parameters. table ii b. burn - in and operating l ife test , delta parameters (+25 c ). 1 / parameter 2 / symbol delta limits supply current i cch , i ccl , i ccz 300 na input current low level i il 20 na input current high level i ih 20 na output voltage low level (v cc = 5.5 v, i ol = 24 ma) v ol 0.04 v output voltage high level (v cc = 5.5 v, i oh = - 24 ma) v oh 0.20 v 1 / this table is representation of what vendor cage f8859 has experienced and is guaranteed and not meant to be construed as a quality assurance requirement for any other vendor. 2 / these parameters shall be recorded before and after the required burn - in and life tests to determine the delta limits. 4.4.2 group c inspection . the group c inspection end - point electrical parameters shall be as specified in table ii a herein. 4.4.2.1 additional criteria for device class m . steady - state life test conditions, me thod 1005 of mil- std -883: a. test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit s hall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of mil - std -883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil - std -883.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 18 dscc form 2234 apr 97 4.4.2.2 additional criteria for device classes q and v . the steady - state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil - prf - 38535. the test circuit shall be maintained under document revision level control by the device manufacturer's trb in accordance with mil - prf - 38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of mil - std -883. 4.4.3 group d inspection . the group d inspection end - point electrical parameters shall be as specified in table ii a herein. 4.4.4 group e inspection . group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. end - point electrical parameters shall be as specified in table ii a herein. b. for device classes q and v, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in mil - prf - 38535 for the rha level being tested. for device class m, the devices shall be subjected to radiation hardness ass ured tests as specified in mil - prf - 38535, appendix a for the rha level being tested. all device classes must meet the postirradiation end - point electrical parameter limits as defined in table i a at t a = +25 c 5 c, after exposure, to the subgroups spec ified in table ii a herein. 4.4.4.1 total dose irradiation testing . total dose irradiation testing shall be performed in accordance with mil - std - 883, method 1019 condition a, and as specified herein. a. inputs tested high, v cc = 5.5 v dc 5%, v in = 5 .0 v dc +10%, r in = 1 k ? 20%, and all outputs are open. b. inputs tested low, v cc = 5.5 v dc 5%, v in = 0.0 v dc, r in = 1 k ? 20%, and all outputs are open. 4.4.4.1.1 accelerated annealing testing . accelerated annealing testing shall be performed on all devices requiring a rha level greater than 5k rads (si). the post - anneal end - point electrical parameter limits shall be as specified in table ia herein and shall be the pre - irradiation end - point e lectrical parameter limits at 25c 5 c. testing shall be performed at initial qualification and after any design or process changes which may affect the rha response of the device. 4.4.4. 2 single event phenomena (sep) . when specified in the purchase o rder or contract, sep testing shall be required on class v devices. sep testing shall be performed on the standard evaluation circuit (sec) or alternate sep test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. test four devices with zero failures. astm f1192 may be used as a guideline when performing sep testing. the test conditions for sep are as follows: a. the ion beam angle of inci dence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60 ). no shadowing of the ion beam due to fixturing or package related effects is allowed. b. the fluence shall be 100 errors or 10 7 ions/cm 2 . c. the flux shall be between 10 2 and 10 5 ions/cm 2 /s. the cross - section shall be verified to be flux independent by measuring the cross - section at two flux rates which differ by at least an order of magnitude. d. the particle range shall be 20 micron in s ilicon. e. the test temperature shall be +25 c for the upset measurements and the maximum rated operating temperature 10 c for the latch - up measurements. f. bias conditions shall be defined by the manufacturer for the latch - up measurements. g. f or sep test limits, see table ib herein. 4.5 methods of inspection . methods of inspection shall be specified as follows: 4.5.1 voltage and current . unless otherwise specified, all voltages given are referenced to the microcircuit gnd terminal. currents given are conventional current and positive when flowing into the referenced terminal.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 19 dscc form 2234 apr 97 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil - prf - 38535 for device classes q and v or mil - prf -3 8535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 replaceab ility . microcircuits covered by this drawing will replace the same generic device covered by a contractor - prepared specification or drawing. 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users o f record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform dla land and maritime when a system application requires configuration control and which smd's are applicable to that system . dla land and maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectro nic devices (fsc 5962) should contact dla land and maritime - va, telephone (614) 692 - 054 4 . 6.4 comments . comments on this drawing should be di rected to dla land and maritime - va, columbus, ohio 43218 - 3990, or telephone (614) 692 - 054 0 . 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil - prf - 38535 and mil- hdbk -1331. 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml - 38535. the vendors listed in qml - 38535 have submitted a certificate of compliance (see 3.6 herein) to dla land and maritime- va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for class m are listed in mil - hdbk - 103. the vendors listed in mil - hdbk - 103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dla land and maritime -va. 6.7 additional information . when specified in the purchase order or contract, a copy of the following additional data shall be supplied. a. rha upset levels. b. test conditions (sep). c. number of upsets (se u ). d. number of transients (se t ). e. occurrence of latchup (se l ).
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 20 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962 -87552 a.1 scope a.1.1 scope . this appendix establishes minimum requirements for microcircuit die to be supplied under the qualified manufacturers list (qml) program. qml microcircuit d ie meeting the requirements of mil - prf - 38535 and the manufacturers approved qm plan for use in monolithic microcircuits, multi - chip modules (mcms), hybrids, electronic modules, or devices using chip and wire designs in accordance with mil - prf - 38534 are spe cified herein. two product assurance classes consisting of military high reliability (device class q) and space application (device class v) are reflected in the part or identification number (pin). when available, a choice of radiation hardness assuranc e (rha) levels are reflected in the pin. a.1.2 pin . the pin is as shown in the following example: 5962 f 8775 2 01 v 9 a federal stock class designator rha designator (see a.1.2.1) device type (see a.1.2.2) device class designator die code die details (see a.1.2.4) \ / (see a.1.2.3) \ / drawing number a.1.2.1 rha designator . device classes q and v rha identified die meet the mil - prf - 38535 specified rha levels. a dash (- ) indicates a non- rha die. a.1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 54ac244 octal buffer/line driver with three - state outputs a.1.2.3 device class designator . d evice class q designator will not be included in the pin and will not be marked on the device s ince the device class designator has been added after the o riginal issuance of this drawing. device class device requirements documentation q or v certification and qualification to the die requirements of mil - prf -38535
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 21 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962 -87552 a.1.2.4 die details . the die details designation is a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each pro duct and variant supplied to this ap pendix. a.1.2.4.1 die physical dimensions . die type figure number 01 a-1 a.1.2.4.2 die bonding pad locations and electrical functions . die type figure number 01 a-1 a.1.2.4.3 interface materials . die type figure number 01 a-1 a.1.2.4.4 assembly related information . die type figure number 01 a-1 a.1.3 absolute maximum ratings . see paragraph 1.3 herein for details. a.1.4 recommended operating conditions . see paragraph 1.4 herein for details.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 22 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962 -87552 a.2. applicable documents a.2.1 government specification, standards, and handbooks . the following specification, standard, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. department of defense specification mil - prf -38535 - integrated circuits, manufacturing, general specification for. department of defense s tandard mil - std -883 - test method standard microcircuits. department of defense handbooks mil - hdbk -103 - list of standard microcircuit drawings. mil - hdbk -780 - standard microcircuit drawings. (copies of these documents are available online at https://assist.dla.mil/quicksearch/ or from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111 - 5094.) a.2.2 order of precedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. a.3 requirements a .3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil - prf - 38535 and as specified herein or as modified in the device manufacturer?s quality management (qm) plan. the modification in the qm pl an shall not affect the form, fit, or function as described herein. a.3.2 design, construction and physical dimensions . the design, construction, and physical dimensions shall be as specified in mil - prf - 38535 and herein and the manufacturer?s qm plan fo r device classes q and v. a.3.2.1 die physical dimensions . the die physical dimensions shall be as specified in a.1.2.4.1 and on figure a -1. a.3.2.2 die bonding pad locations and electrical functions . the die bonding pad locations and electrical functions shall be as specified in a.1.2.4.2 and on figure a -1. a.3.2.3 interface materials . the interface materials for the die shall be as specified in a.1.2.4.3 and on figure a -1. a.3.2.4 assembly related information . the assembly related informat ion shall be as specified in a.1.2.4.4 and on figure a -1. a.3.2.5 truth table . the truth table shall be as defined in paragraph 3.2.3 herein. a.3.2.6 radiation exposure circuit . the radiation exposure circuit shall be as defined in paragraph 3.2.6 he rein. a.3.3 electrical performance characteristics and post - irradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and post - irradiation parameter limits are as specified in table i a of the body of thi s document. a.3.4 electrical test requirements . the wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table i a.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 23 dscc form 2234 apr 97 appendix a ap pendix a forms a part of smd 5962 -87552 a.3.5 marking . as a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufact urer?s identification and the pin listed in a.1.2 herein. the certification mark shall be a ?qml? or ?q? as required by mil - prf -38535. a.3.6 certification of compliance . for device classes q and v, a certificate of compliance shall be required from a qml - 38535 listed manufacturer in order to supply to the requirements of this drawing (see a.6.4 herein). the certificate of compliance submitted to dla land and maritime -va prior to listing as an approved source of supply for this appendix shall affirm th at the manufacturer?s product meets, for device classes q and v, the requirements of mil - prf - 38535 and the requirements herein. a.3.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil - prf - 38535 shall be provided with each lot of microcircuit die delivered to this drawing. a.4 verification a.4.1 sampling and inspection . for device classes q and v, die sampling and inspection procedures shall be in accordance with mil - prf - 38535 or as modified in the device manufacturer?s quality management (qm) plan. the modifications in the qm plan shall not affect the form, fit, or function as described herein. a.4.2 screening . for device classes q and v, screening shall be in accordance with mil - prf - 38535, and as defined in the manufacturer?s qm plan. as a minimum, it shall consist of: a. wafer lot acceptance for class v product using the criteria defined in mil - std - 883, method 5007. b. 100% wafer probe (see paragraph a.3.4 herein). c. 100% internal visual inspection to the applicable class q or v criteria defined in mil - std - 883, method 2010 or the alternate procedures allowed in mil - std - 883, method 5004. a.4.3 conformance inspection . a.4.3.1 group e inspection . group e inspection is required only for p arts intended to be identified as radiation assured (see a.3.5 herein). rha levels for device classes q and v shall be as specified in mil - prf - 38535. end point electrical testing of packaged die shall be as specified in table ii herein. group e tests an d conditions are as specified in paragraphs 4.4.4 herein. a.5 die carrier a.5.1 die carrier requirements . the requirements for the die carrier shall be accordance with the manufacturer?s qm plan or as specified in the purchase order by the acquiring a ctivity. the die carrier shall provide adequate physical, mechanical and electrostatic protection. a.6 notes a.6.1 intended use . microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with mil - prf -38535 or mil - prf - 38534 for government microcircuit applications (original equipment), design applications, and logistics purposes. a.6.2 comments . comments on this appendix should be directed to dla land and maritime - va, p.o. box 3990, columbus, ohio 43218 -39 90 or telephone (614) 692 - 054 0 . a.6.3 abbreviations, symbols and definitions . the abbreviations, symbols, and definitions used herein are defined in mil - prf - 38535 and mil- hdbk -1331. a.6.4 sources of supply for device classes q and v . sources of supp ly for device classes q and v are listed in qml - 38535. the vendors listed within qml- 38535 have submitted a certificate of compliance (see a.3.6 herein) to d la land and maritime - va and have agreed to this drawing.
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 24 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962 -87552 pad size: pad numbers 1 to 9 and 11 to 19: 100 x 100 m pad numbers 10 (gnd) and 20 (v cc ): 100 x 280 m note: pad numbers reflect terminal numbers when placed in case outline x (see figure 1). figure a -1 . die bonding pad locations and electrical functions . 19 20 20 1 2 3 4 5 6 7 8 optional manufacturer?s logo 11 10 10 18 17 16 15 14 13 12 9
standard microcircuit drawing size a 5962- 87552 dla land and maritime columbus, ohio 43218 - 3990 revision level k sheet 25 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962 -87552 die physical dimensions . die size: 2408 x 2250 m die thickness: 285 25 m interface materials . top metallization: al si cu 0.85 m backside metallization: none glassivation. type: p. vapox + nitride thickness: 0.5 m ? 0.7 m substrate: silicon assembly related information . substrate potential: floating or tied to gnd special assembly instructions: bond pad #20 (v cc ) first figure a -1 . die bonding pad locations and electrical functions ? continued.
standard microcircuit drawing bulletin date: 12-07-25 approved sources of supply for smd 5962 -87552 are listed below for immediate acquisition information only and shall be added to mil - hdbk - 103 and qml- 38535 during the next revision. mil- hdbk - 103 and qml- 38535 will be revised to include the addition or deletion of sources. the vendors listed below ha ve agreed to this drawing and a certificate of compliance has been submitted to and accepted by dla land and maritime - va. this information bulletin is superseded by the next dated revision of mil - hdbk - 103 and qml-38535. dla land and maritime maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/programs/smcr/ . standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962- 8755201ra 01295 snj54ac244j 0c7v7 54ac244dmqb 5962- 8755201sa 01295 snj54ac244w 0c7v7 54ac244fmqb 5962- 87552012a 01295 snj54ac244fk 0c7v7 54ac244lmqb 5962- 8755201za 0c7v7 54ac244wg - qml 5962- 8755201vra 01295 snv54ac244j 5962- 8755201vsa 01295 snv54ac244w 5962- 8755201xa 3 / 54ac244k02q 5962- 8755201xc 3 / 54ac244k01q 5962- 8755201vxa 3 / 54ac244k02v 5962- 8755201vxc 3 / 54ac244k01v 5962f8755201xa f8859 rhfac244k02q 5962f8755201xc f8859 rhfac244k01q 5962f8755201vxc f8859 rhfac244k01v 5962f8755201vxa f8859 rhfac244k02v 5962f8755201ra f8859 rhfac244d04q 5962f8755201rc f8859 rhfac244d03q 5962f8755201vra f8859 rhfac244d04v 5962f8755201vrc f8859 RHFAC244D03V 5962f8755201v 9a f8859 ac244 die2v 5962- 8755202ja 3 / 54ac11244 5962- 8755202ka 3 / 54ac11244 5962- 8755202la 3 / 54ac11244 5962- 87552023a 3 / 54ac11244 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3 / not available from an approved source of supply. sheet 1 of 2
standard microcircuit drawing bulletin ? continued. date: 12-07-25 vendor cage vendor name number and address 0c7v7 e2v aerospace and defense, inc. dba qp semiconductor, inc. 765 sycamore drive milpitas , ca 950 35 f8859 st microelectronics 3 rue de suisse bp4199 35041 rennes cedex2 - france 01295 texas instruments incorporated semiconductor group 8505 forest ln. p.o. box 660199 dallas, tx 75243 point of contact: u.s. highway 75 south p.o. box 84, m/s 853 sherman, tx 75090 - 9493 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin. sheet 2 of 2

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